Kontakt
Ako nakupovať
Doručenie
Nákupný poradca
Angličtina
249 b
Až 30 dní na vrátenie tovaru
Zákazníci tiež kúpili
/
Brožovaná
24.25
€
This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.
Informácie o knihe
Angličtina
Kategórie
Darujte túto knihu ešte dnes
Je to jednoduché
1 Pridajte knihu do košíka a vyberte možnosť doručiť ako darček 2 Obratom Vám zašleme poukaz 3 Knihu zašleme na adresu obdarovanéhoMohlo by vás tiež zaujímať
/
Brožovaná
17.48
€
Ahoj! Som Libroamiko, tvoj knižný radca.
Ako ti môžem pomôcť?