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Modelling of basic parameters for non-conventional MOSFETs

Name: Modelling of basic parameters for non-conventional MOSFETs
Brand: LAP LAMBERT Academic Publishing
SKU: 43849778
Price: 39.14 EUR
Availability: InStock
Author: Swapnadip De
ISBN: 9786206739814

Swapnadip De

Jazyk

Angličtina

Kniha Brožovaná

Libristo kód: 43849778

Nakladateľstvo LAP LAMBERT Academic Publishing, júl 2023

In this book, the channel engineering and the gate engineering techniques are combined to form novel... Celý popis

Libristo kód: 43849778

95 b

39.14 €

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In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.