Kontakt
Ako nakupovať
Doručenie
Nákupný poradca
Angličtina
636 b
Až 30 dní na vrátenie tovaru
Zákazníci tiež kúpili
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Informácie o knihe
Angličtina
Darujte túto knihu ešte dnes
Je to jednoduché
1 Pridajte knihu do košíka a vyberte možnosť doručiť ako darček 2 Obratom Vám zašleme poukaz 3 Knihu zašleme na adresu obdarovanéhoMohlo by vás tiež zaujímať
/
Pevná
31.83
€
/
Brožovaná
29.21
€
/
Brožovaná
48.82
€
Ahoj! Som Libroamiko, tvoj knižný radca.
Ako ti môžem pomôcť?